更新时间：2024-09-21 08:45
黄芊芊，女，1989年9月出生于江西省上饶市，博士学位，北京大学研究员、博士生导师。
主要从事超低功耗微电子器件研究，成功研制出新型肖特基-隧穿混合控制场效应晶体管等超低功耗新机理器件，打破了国际上硅基隧穿器件的亚阈摆幅纪录，实现了国际领先的综合性能水平。
曾先后在2019年、2020年和2022年，获得“IEEE电子器件学会青年成就奖”、第二届“科学探索奖”、“第十八届中国青年女科学家奖”，同时她还是获得第二届“科学探索奖”的50人当中最年轻的科学家。
黄芊芊，1989年生人，2006年考入北京大学信息科学技术学院，大三时加入黄如院士课题组，2010年起，黄芊芊在王阳元院士和黄如院士的指导下，开始从事集成电路超低功耗微纳电子器件的研究并顺利取得了北京大学微电子学和固体电子学博士学位。
2017年9月，黄芊芊博士后顺利出站，被北京大学聘为微纳电子学系研究员、博士生导师；次年1月12日，入选2017年度“未来女科学家计划”，成为北京大学首批入选者之一；同年黄芊芊所申请的“新型超低功耗微纳电子器件”项目成功获得了国家自然科学基金委员会优秀青年科学基金的资助。
2019年黄芊芊获IEEE电子器件学会青年成就奖，是亚洲地区的唯一获奖者，也是该奖项设立以来第二位来自中国科研单位的获奖者；次年获得“求是杰出青年学者奖”和第二届“科学探索奖”，同时她还是获得第二届“科学探索奖”的50人当中最年轻的科学家；同年，北京大学邀请包括黄芊芊在内的七位杰出校友为“北大新生”写下书信，并与录取通知书一同寄出。2022年荣获“第十八届中国青年女科学家奖”。
黄芊芊长期致力于后摩尔时代集成电路超低功耗微纳电子器件及其应用的研究，已在 IEDM、 VLSI等国际顶尖学术会议上发表多篇学术论文，并且相关成果还被国际半导体技术路线指南引用，并与国内领先的集成电路制造企业和创新平台合作研制了世界上首个基于12英寸CMOS大生产线的超低功耗互补隧穿器件集成技术，在同一硅晶圆片上同时实现了性能优异的新型隧穿器件和标准CMOS器件的制备，为发展具有自主知识产权的超低功耗集成电路技术与产业提供了坚实的理论与技术支撑。
目前已成功研制新型肖特基-隧穿混合控制场效应晶体管等超低功耗新机理器件，打破了国际上硅基隧穿器件的亚阈摆幅纪录；
国际上首次在单独铁电电容中直接观测到负微分电容现象，针对低功耗负电容晶体管中的稳态负电容机制问题，提出并验证了符合物理本质的动态极化翻转负电容理论；
国际上首次利用铁电极化翻转模拟生物神经元动态行为提出并实验实现了基于新型超低功耗仿生铁电晶体管的脉冲神经元，极大降低了脉冲神经元的硬件开销和能耗，为大规模、高集成的超低功耗神经形态计算芯片奠定了重要器件基础。
Weikai Xu, Jin Luo, Zerui Chen, Boyi Fu, Zhiyuan Fu, Kaifeng Wang, Qianqian Huang*, and Ru Huang*, “A Novel Ferroelectric FET based Universal Content Addressable Memory with Reconfigurability for 面积 and 能量-Efficient In-Memory-Searching System”, IEEE Electron Device Lett., vol. 45, no. 7, pp. 1345-1348.
Weikai Xu, Jin Luo, Qianqian Huang*, and Ru Huang*, “Compact and Efficient CAM 建筑 through Combinatorial Encoding and Self-Terminating Searching for In-Memory-Searching Accelerator”, in 61st DAC, 2024.
Zhiyuan Fu, Shengjie Cao, Hao Zheng, Jin Luo, Qianqian Huang*, and Ru Huang*, “Hafnia-Based High-Disturbance-Immune and Selector-Free Cross-小数点 FeRAM”, IEEE Trans. Electron Devices, vol. 71, no. 5, pp. 3358-3364, 2024.
Zhiyuan Fu, Kaifeng Wang, Shaodi Xu, Qianqian Huang* and Ru Huang*, “Novel Asymmetric Operation Scheme for HfO2-based FeRAM Based on Reconstruction of Ferroelectric 动力学 Impacts”, IEEE Electron Device Lett., vol. 45, no. 1, pp. 20-23, 2024.
Weikai Xu#, Zhiyuan Fu#, Kaifeng Wang, Chang Su, Jin Luo, Zerui Chen, Qianqian Huang*, and Ru Huang*, “A Novel Small-Signal Ferroelectric 电容 based Content Addressable Memory for 面积 and 能量Efficient Lifelong Learning”, IEEE Electron Device Lett., vol. 45, no. 1, pp. 24-27, 2024.
Jin Luo, Boyi Fu, Yide Du, Chang Su, Mengxuan Yang, Qianqian Huang*, and Ru Huang*, “Energy-efficient Ferroelectric-FET-based Agent with Memory Trace for Enhanced Reinforcement Learning”, IEEE Electron Device Lett., vol. 45, no. 2, pp. 264-267, 2024.
Chang Su, Zhiyuan Fu, Shaodi Xu, Ru Huang* and Qianqian Huang*, “New Insight into Impacts from Read Cycle Number and 电压 Sweeping Direction on Memory Window of Ferroelectric FET”, in CSTIC, Shanghai, China, March, 2024, pp. 1-3. (Best Poster Award)
Yaoru Hou#, Kaifeng Wang#, Chenxing Liu-Sun, Jianfeng Hang, Xinfang Tong, Chunyu Peng, Yongqin Wu, Ye Ren, Weihai Bu, Xin Si, Bo Liu, Xiulong Wu, Jun Yang, Hao Cai*, Qianqian Huang*, Ru Huang, “A Sub-100nA Ultra-low Leakage MCU Embedding Always-on Domain Hybrid Tunnel FET-CMOS on 300mm Foundry Platform”, in IEDM Tech. Dig., 2023.
Zhiyuan Fu#, Shengjie Cao#, Hao Zheng, Jin Luo, Qianqian Huang* and Ru Huang*, “First Demonstration of Hafnia-based Selector-Free FeRAM with High Disturb Immunity through 设计 Technology Co-Optimization”, in IEDM Tech. Dig., 2023.
Chang Su, Ning Feng, Kaifeng Wang, Lining Zhang, Ru Huang* and Qianqian Huang*, “A Physical MFIS-FeFET Model with Awareness of Drain-Induced Spatially-Distributed Polarization and Ferroelectric Parametric Fluctuation”, in SISPAD, 2023.
Kaifeng Wang, Yongqin Wu, Ye Ren, Renjie Wei, Zerui Chen, Jianfeng Hang, Zhixuan Wang, Fangxing Zhang, Lining Zhang, Chunyu Peng, Xiulong Wu, Le Ye, Kai Zheng, Jin Kang, Xusheng Wu, Weihai Bu*, Ru Huang* and Qianqian Huang*, “First Foundry Platform Demonstration of Hybrid Tunnel FET and MOSFET Circuits Based on a Novel Laminated Well Isolation Technology”, in ESSDERC, 2023, pp.13-16.
Chang Su, Zhongxin Liang, Zhiyuan Fu, Shaodi Xu, 开封市 Wang, Puyang Cai, Liang Chen, Ru Huang* and Qianqian Huang*, “New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric 动力学 and Interface Charges during Readout”, in ESSDERC, 2023, pp. 89-92. (Best Student Paper Award)
Jin Luo, Tianyi Liu, Zhiyuan Fu, Xinming Wei, Qianqian Huang*, and Ru Huang*, “Ferroelectric FET based Signed Synapses of Excitatory and Inhibitory Connection for Stochastic Spiking Neural Network based Optimizer”, in IEEE EDTM, 2023, pp. 307-309. (Best Student Paper Award)
Zhiyuan Fu, Kaifeng Wang, Boyi Fu, Shaodi Xu, Hao Zheng, Jin Luo, Chang Su, Weikai Xu, Xiao Lv, Qianqian Huang* and Ru Huang*, “Novel 能量efficient Hafnia-based Ferroelectric Processing-in-Sensor with in-situ Motion Detection and Four-quarter Multiplication”, in IEDM Tech. Dig., 2022.
Jin Luo, Hanyong Shao, Boyi Fu, Zhiyuan Fu, Weikai Xu, Kaifeng Wang, Mengxuan Yang, Yiqing Li, Xiao Lv, Qianqian Huang* and Ru Huang*, “Novel Ferroelectric Tunnel FinFET based Encryption-embedded Computing-in-Memory for Secure AI with High 面积 and 能量Efficiency”, in IEDM Tech. Dig., 2022.
Kaifeng Wang, Qianqian Huang*, Yongqin Wu, Ye Ren, Renjie Wei, Zhixuan Wang, Libo Yang, Fangxing Zhang, Kexing Geng, Yiqing Li, Mengxuan Yang, Jin Luo, Ying Liu, Kai Zheng, Jin Kang, Le Ye, Lining Zhang, Weihai Bu* and Ru Huang*, “A Novel 能量Efficient Salicide-Enhanced Tunnel Device Technology Based on 300 mm Foundry Platform Towards AIoT Applications”, in ESSDERC, 2022, pp. 360-363.
Chang Su, Weikai Xu, Qianqian Huang*, Lining Zhang and Ru Huang*, “New Insights into the Effect of Spatially Distributed Polarization in Ferroelectric FET on Content Addressable Memory Operation for Machine Learning Applications”, in SISPAD, 2022, pp. 9-10.
Chang Su, Qianqian Huang*, Kaifeng Wang, Zhiyuan Fu and Ru Huang*, “New insights into memory window of Ferroelectric FET impacted by read operations with awareness of polarization switching 动力学”, IEEE Trans. Electron Devices, vol. 69, no. 9, pp. 5310-5315, 2022.
Jin Luo, Weikai Xu, Boyi Fu, Zheru Yu, Mengxuan Yang, Yiqing Li, Qianqian Huang*, and Ru Huang*, “A Novel Ambipolar Ferroelectric Tunnel FinFET based Content Addressable Memory with Ultra-low Hardware Cost and High Energy Efficiency for Machine Learning”, in VLSI Symp. Tech. Dig., 2022.##
Weikai Xu, Jin Luo, Yide Du, Qianqian Huang*, and Ru Huang*, “Novel negative-feedback method for writing variation suppression in FeFET-based computing-in-memory macro”, in CSTIC, Shanghai, China, June, 2022. (Best Student Paper Award)
Jin Luo, Tianyi Liu, Zhiyuan Fu, Xinming Wei, Mengxuan Yang, Liang Chen, Qianqian Huang*, and Ru Huang*, “A Novel FeFET-based Adaptively-Stochastic Neuron for Stimulated-Annealing based Optimizer with Reduced Hardware Cost”, IEEE Electron Device Lett., vol. 43, no. 2, pp. 308-311, 2022.
Jin Luo, Cheng Chen, Qianqian Huang*, and Ru Huang*, “A Biomimetic Tunnel FET-based Spiking Neuron for Energy Efficient Neuromorphic Computing with Reduced Hardware Cost”, IEEE Trans. Electron Devices, vol. 69, no. 2, pp. 882-886, 2022.
Jin Luo, Weikai Xu, Yide Du, Boyi Fu, Jiahao Song, Zhiyuan Fu, Mengxuan Yang, Yiqing Li, Le Ye, Qianqian Huang* and Ru Huang*, “能量 and 面积efficient Fe-FinFET-based 时间Domain Mixed-Signal Computing In Memory for Edge Machine Learning”, in IEDM Tech. Dig., 2021, pp 438-441.
Zhixuan Wang, Le Ye*, Qianqian Huang*, Yangyuan Wang and Ru Huang “Re-Assessment of Steep-Slope Device 设计 from a Circuit-Level 透视 Using Novel Evaluation Criteria and Model-less Method”, IEEE TCAS-I, vol. 68, no. 4, pp. 1624-1635, 2021.
Liang Chen, Rundong Jia, Qianqian Huang*, Ru Huang*, “Si/SnS2 vertical heterojunction tunneling transistor with ionic-羧基液体丁腈橡胶 gate for ultra-low 功率 application”, in CSTIC, Shanghai, China, March, 2021. (Best Student Paper Award)
Kaifeng Wang, Qianqian Huang*, Chang Su, Liang Chen, Mengxuan Yang, Ru Huang*, “Impacts of ferroelectric parameters on the electrical characteristics of FeFET for low-功率 logic and memory applications”, in CSTIC, Shanghai, China, March, 2021. (Best Poster Award)
Yiqing Li, Qianqian Huang*, Mengxuan Yang, Ting Li, Zhixuan Wang, Weihai Bu, Jin Kang, Wenbo Wang, Shengdong Zhang, and Ru Huang*, “A Novel Self-Aligned Dopant-Segregated Schottky Tunnel-FET with Asymmetry Sidewall Based on Standard CMOS Technology”, in ICSICT, Kun Ming, China, 2020. (Best Student Paper Award)
Shuhan Liu, Tianyi Liu, Zhiyuan Fu, Cheng Chen, Qianqian Huang*, Ru Huang*, “Implementation of lateral divisive inhibition based on ferroelectric FET with ultra-low hardware cost for neuromorphic computing”, in CSTIC, Shanghai, China, June, 2020. (Best Student Paper Award)
Jin Luo, Liutao Yu, Tianyi Liu, Mengxuan Yang, Zhiyuan Fu, Zhongxin Liang, Liang Chen, Cheng Chen, Shuhan Liu, Si Wu, Qianqian Huang*, Ru Huang*, “Capacitor-less Stochastic Leaky-FeFET Neuron of Both Excitatory and Inhibitory Connections for SNN with Reduced Hardware Cost”, in IEDM Tech. Dig., 2019.
Cheng Chen, Mengxuan Yang, Shuhan Liu, Tianyi Liu, Kunkun Zhu, Yang Zhao, Huimin Wang, Qianqian Huang* and Ru Huang*, “Bio-Inspired Neurons Based on Novel Leaky-FeFET with Ultra-Low Hardware Cost and Advanced Functionality for All-Ferroelectric Neural Network”, in VLSI Symp. Tech. Dig., 2019.
Yang Zhao, Zhongxin Liang, Qianqian Huang*, 成姓 Chen, Mengxuan Yang, Zixuan Sun, Kunkun Zhu, Huimin Wang, Shuhan Liu, Tianyi Liu, Yue Peng, Genquan Han and Ru Huang*, “A Novel Negative 电容 Tunnel FET with Improved Subthreshold Swing and Nearly Non-Hysteresis through Hybrid Modulation”, IEEE Electron Device Lett., vol. 40, no. 6, 2019, pp. 989-992.
Zhixuan Wang, Yuan Zhong, Cheng Chen, Qianqian Huang*, Le Ye*, Libo Yang, Yangyuan Wang, Ru Huang, “Ultra-Low Power Hybrid TFET-MOSFET Topologies for Standard Logic Cells with Improved Comprehensive 表演”, ISCAS, Sapporo, Japan, May 2019.
Kunkun Zhu, Qianqian Huang*, Huimin Wang, Mengxuan Yang, Yang Zhao, Ru Huang*, “Investigation of Negative 电容 Effect from Domain Switching Dynamics”, in CSTIC, Shanghai, China, March, 2019. (Best Student Paper Award)
Huimin Wang, Mengxuan Yang, Qianqian Huang*, Kunkun Zhu, Yang Zhao, Zhongxin Liang, 成姓 Chen, Zhixuan Wang, Yuan Zhong, Xing Zhang, Ru Huang*, “New Insights into the Physical Origin of Negative 电容 and Hysteresis in NCFETs”, in IEDM Tech. Dig., 2018, pp. 707-710.
Jiaxin Wang, Rundong Jia, Qianqian Huang*, Chen pan, Jiadi Zhu, Huimin Wang, 成姓 Chen, Yawen Zhang, Yuchao Yang, Haisheng Song, Feng Miao, Ru Huang*, “Vertical WS2/SnS2 Van der Waals Heterostructure for Tunneling Transistors”, Scientific Reports, 8, 17755 (2018).
Yawen Zhang, Jiewen Fan, Qianqian Huang*, Jiadi Zhu, Yang Zhao, Ming Li, Yanqing Wu, Ru Huang*, “电压Controlled Magnetoresistance in 硅 Nanowire Transistors”, Scientific Reports, 8, 15194 (2018).
Cheng Chen, Qianqian Huang*, Jiadi Zhu, Zhixuan Wang, Yang Zhao, Rundong Jia, Lingyi Guo, Ru Huang*, “New Insights into Energy Efficiency of Tunnel FET with Awareness of Source-Doping-Gradient Variation”, IEEE Trans. Electron Devices, vol. 65, no. 5, pp.2003-2009, 2018.
Cheng Chen, Qianqian Huang*, Jiadi Zhu, Yang Zhao, Lingyi Guo, Ru Huang*, “New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs”, IEEE Trans. Electron Devices, vol. 64, no. 8, pp. 3324-3330, 2017.
Jiadi Zhu, Yang Zhao, Qianqian Huang*, Cheng Chen, Chunlei Wu, Rundong Jia, and Ru Huang*, “设计 and Simulation of a Novel Graded-Channel Heterojunction Tunnel FET with High ION/IOFF Ratio and 极限巅峰 Swing”, IEEE Electron Device Lett., vol. 38, no. 9, pp. 1200-1203, 2017.
Jiadi Zhu, Qianqian Huang*, Lingyi Guo, Libo Yang, 成姓 Chen, Le Ye and Ru Huang*, “Benchmarking of multi-finger Schottky-barrier tunnel FET for ultra-low 功率 applications”, in CSTIC, Shanghai, China, March, 2018. (Best Poster Award)
Yang Zhao, Chunlei Wu, Qianqian Huang*, 成姓 Chen, Jiadi Zhu, Lingyi Guo, Rundong Jia, Zhu lv, Yuchao Yang, Ming Li*, Ru Huang*, “A Novel Tunnel FET 设计 through Adaptive Bandgap Engineering with Constant Sub-threshold Slope over 5 Decades of Current and High ION/IOFF Ratio”, IEEE Electron Device Lett., vol. 39, no. 5, 2017, pp. 540-543.
Qianqian Huang, Rundong Jia, Jiadi Zhu, Zhu Lv, Jiaxin Wang, Cheng Chen, Yang Zhao, Runsheng Wang, Weihai Bu, Wenbo Wang, Jin Kang, Kelu Hua, Hanming Wu, Shaofeng Yu, Yangyuan Wang, Ru Huang, “Deep Insights into Dielectric Breakdown in Tunnel FETs with Awareness of Reliability and 表演 Co-Optimization”, in IEDM Tech. Dig., 2016, pp. 782-785.
Qianqian Huang, Rundong Jia, Cheng Chen, Hao Zhu, Lingyi Guo, Junyao Wang, Jiaxin Wang, Chunlei Wu, Runsheng Wang, Weihai Bu, Jing Kang, Wenbo Wang, Hanming Wu, Shiuh-Wuu Lee, Yangyuan Wang, Ru Huang, “First Foundry Platform of Complementary Tunnel-FETs in CMOS Baseline Technology for Ultralow-功率 IoT Applications: Manufacturability, Variability and Technology Roadmap”, in IEDM Tech. Dig., 2015, pp. 604-607.
Qianqian Huang, Ru Huang, Chunlei Wu, Hao Zhu, Cheng Chen, Jiaxin Wang, Lingyi Guo, Runsheng Wang, Le Ye and Yangyuan Wang, “Comprehensive 表演 Re-assessment of TFETs with a Novel 设计 by Gate and Source Engineering from Device/Circuit 透视”, in IEDM Tech. Dig., 2014, pp. 335 - 338.
Qianqian Huang, Ru Huang, Cheng Chen, Chunlei Wu, Jiaxin Wang, Chao Wang, Yangyuan Wang, “Deep Insights into Low 频率 Noise Behavior of Tunnel FETs with Source Junction Engineering”, in VLSI Symp. Tech. Dig., 2014, pp. 88-89.
Qianqian Huang, Ru Huang, Yue pan, Shenghu Tan, Yangyuan Wang, “Resistive-Gate Field-Effect 晶体管: a Novel Steep-Slope Device Based on a Metal-Insulator-Metal-氧化物 Gate Stack”, IEEE Electron Device Lett.,vol. 35, no. 8, pp. 877-879, 2014.
Qianqian Huang, Ru Huang, Shaowen Chen, Jundong Wu, Zhan Zhan, Yingxin Qiu, and Yangyuan Wang, “Device physics and 设计 of T-gate Schottky barrier tunnel FET with adaptive operation mechanism,” Semicond. Sci. Tech.,vol.29, no. 9, pp. 095013, 2014. (IOP select)
Qianqian Huang, Ru Huang, Zhan Zhan, Yingxin Qiu, Wenzhe Jiang, Chunlei Wu, Yangyuan Wang, “A Novel Si Tunnel FET with 36mV/dec Subthreshold Slope Based on Junction Depleted-Modulation through Striped Gate Configuration”, in IEDM Tech. Dig., 2012, pp. 187 - 190.
Qianqian Huang, Zhan Zhan, Ru Huang , Xiang Mao, Lijie Zhang, Yingxin Qiu, Yangyuan Wang, "Self-Depleted T-gate Schottky Barrier Tunneling FET with Low Average Subthreshold Slope and High ION/IOFF by Gate Configuration and Barrier Modulation", in IEDM Tech. Dig., 2011, pp. 382-385.
Qianqian Huang, Ru Huang, Zhenhua Wang, Zhan Zhan, and Yangyuan Wang, "Schottky barrier impact-ionization metal-氧化物半导体 device with reduced operating 电压", APPL Phys. Lett., 99, 083507 (2011).
参考资料
黄芊芊是北京大学女教授协会会员、中国电子学会会员、中国电子学会青年科学家俱乐部会员，中原地区电子学会青年女科学家俱乐部会员、第一届理事会理事，IEDM等国际会议TPC委员，IEEE EDS VLSI Technology\u0026Circuits等技术委员会委员，《中国科学：信息科学》《Microelectronic Engineering》等期刊编委。
参考资料：
集成电路研究探索的是极其精致的微观世界，只有在微观纳米尺度上“巧夺天工”，才能为宏观信息社会的发展注入强大的“芯”动力。从学生成长为老师，从攻破原理创新到实现技术转化，身为中国共产党员，黄芊芊始终铭记历史使命与时代责任。面向世界科技前沿，面向国家重大需求，服务国家发展战略，为我国关键核心技术攻关及高水平科技自立自强贡献力量。——北京大学新闻网
在基础学科呼声越来越高的今天，像黄芊芊这样能够数十年如一日，潜心扎实做基础科学研究和持续前沿创新的科学家其实并不多。但正是因为有了这群科学家们的坚持，中国的产业、经济才有了今天的飞跃发展。——环球人物杂志
黄芊芊从20岁起持续攻关—— 在集成电路基础研究中奋力攀登(科技视点·科技自立自强 青年奋勇担当①).青少年爱国主义网.2023-07-12
微纳电子学研究院黄芊芊助理教授入选2017年度“未来女科学家计划”.北京大学信息科学技术学院.2023-07-12
奋进新征程 建功新时代 | 北大优秀共产党员风采之五黄芊芊：芯片突围者.北京大学新闻网.2023-07-12
1.5亿重奖50位青年科学家！第二届“科学探索奖”揭晓.澎湃网.2023-07-12
黄芊芊:立鸿鹄志 做奋斗者.北京大学新闻网.2023-07-12
黄芊芊:芯片突围者.北京大学新闻网.2023-07-12
在集成电路基础研究中奋力攀登.中工网.2023-07-12
北京大学微纳电子学系黄芊芊研究员获IEEEElectronDevicesSocietyEarlyCareerAward.北京大学信息科学技术学院.2023-07-12
黄芊芊、朱华星、曾振中三位北大人荣获2020年度“求是杰出青年学者奖”.北京大学校友网.2023-07-12
北大新版录取通知书出炉!7位北大人给新生送“礼”.搜狐网.2023-07-12
巾帼科研之星闪耀科学殿堂 第十八届“中国青年女科学家奖”全名单来啦！.微信公众平台.2023-07-12
黄芊芊.北京大学学者主页.2023-07-12
奋进新征程 建功新时代——北京大学优秀共产党员风采（五）.微信公众平台.2024-09-15
全球仅3人！31岁北大美女博导获世界科研大奖，她的硬核学霸人生才是亮点.今日头条.2023-07-12